Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / MURT20010
Manufacturer Part Number | MURT20010 |
---|---|
Future Part Number | FT-MURT20010 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MURT20010 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) (per Diode) | 200A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 100A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 25µA @ 50V |
Operating Temperature - Junction | - |
Mounting Type | Chassis Mount |
Package / Case | Three Tower |
Supplier Device Package | Three Tower |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MURT20010 Weight | Contact Us |
Replacement Part Number | MURT20010-FT |
MBRT30080R
GeneSiC Semiconductor
MBRT400100R
GeneSiC Semiconductor
MBRT400150
GeneSiC Semiconductor
MBRT400150R
GeneSiC Semiconductor
MBRT40020
GeneSiC Semiconductor
MBRT400200
GeneSiC Semiconductor
MBRT400200R
GeneSiC Semiconductor
MBRT40020R
GeneSiC Semiconductor
MBRT40030
GeneSiC Semiconductor
MBRT40030R
GeneSiC Semiconductor
XC3S1000-4FTG256I
Xilinx Inc.
APA750-PQG208I
Microsemi Corporation
5SGXEA7K2F35I2LN
Intel
XC7K410T-L2FFG676I
Xilinx Inc.
A42MX16-PQ160A
Microsemi Corporation
LCMXO2-4000HE-5FG484I
Lattice Semiconductor Corporation
5CGXFC7D6F31I7
Intel
EP2AGX125EF35C5
Intel
EP4SGX360FF35I3
Intel
5SGSMD3H1F35C1N
Intel