Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / MURF20010
Manufacturer Part Number | MURF20010 |
---|---|
Future Part Number | FT-MURF20010 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MURF20010 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) (per Diode) | 200A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 100A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 25µA @ 50V |
Operating Temperature - Junction | -55°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | TO-244AB |
Supplier Device Package | TO-244 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MURF20010 Weight | Contact Us |
Replacement Part Number | MURF20010-FT |
MDA600-20N1
IXYS
MDA600-22N1
IXYS
MDA95-22N1B
IXYS
MDA950-12N1W
IXYS
MDA950-14N1W
IXYS
MDA950-16N1W
IXYS
MDA950-18N1W
IXYS
MDA950-20N1W
IXYS
MDA950-22N1W
IXYS
MDD600-12N1
IXYS
XC3S1000-4FTG256I
Xilinx Inc.
APA750-PQG208I
Microsemi Corporation
5SGXEA7K2F35I2LN
Intel
XC7K410T-L2FFG676I
Xilinx Inc.
A42MX16-PQ160A
Microsemi Corporation
LCMXO2-4000HE-5FG484I
Lattice Semiconductor Corporation
5CGXFC7D6F31I7
Intel
EP2AGX125EF35C5
Intel
EP4SGX360FF35I3
Intel
5SGSMD3H1F35C1N
Intel