Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / MUN5237DW1T1
Manufacturer Part Number | MUN5237DW1T1 |
---|---|
Future Part Number | FT-MUN5237DW1T1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5237DW1T1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5237DW1T1 Weight | Contact Us |
Replacement Part Number | MUN5237DW1T1-FT |
SMUN5235DW1T3G
ON Semiconductor
MUN5113DW1T1G
ON Semiconductor
MUN5134DW1T1G
ON Semiconductor
MUN5236DW1T1G
ON Semiconductor
SMUN5231DW1T1G
ON Semiconductor
MUN5213DW1T3G
ON Semiconductor
MUN5312DW1T1G
ON Semiconductor
MUN5231DW1T1G
ON Semiconductor
MUN5112DW1T1G
ON Semiconductor
MUN5216DW1T1G
ON Semiconductor
LFEC3E-3TN100I
Lattice Semiconductor Corporation
XC3S50-5PQG208C
Xilinx Inc.
XC7S75-L1FGGA484I
Xilinx Inc.
LCMXO2280E-5FTN256C
Lattice Semiconductor Corporation
ICE65L01F-TVQ100C
Lattice Semiconductor Corporation
XC5VLX110T-2FF1136C
Xilinx Inc.
XC6SLX45T-2CSG324I
Xilinx Inc.
A3P1000-FGG144T
Microsemi Corporation
EP3C40F324C8N
Intel
EP3C40F324C8
Intel