Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / MUN5233T1G
Manufacturer Part Number | MUN5233T1G |
---|---|
Future Part Number | FT-MUN5233T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5233T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 202mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SC-70-3 (SOT323) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5233T1G Weight | Contact Us |
Replacement Part Number | MUN5233T1G-FT |
MUN2132T1
ON Semiconductor
MUN2133T1
ON Semiconductor
MUN2134T1
ON Semiconductor
MUN2136T1
ON Semiconductor
MUN2137T1
ON Semiconductor
MUN2211JT1
ON Semiconductor
MUN2211JT1G
ON Semiconductor
MUN2211T3
ON Semiconductor
MUN2212T1
ON Semiconductor
MUN2213JT1
ON Semiconductor
A3P1000-2FG484
Microsemi Corporation
M7A3P1000-1FGG484I
Microsemi Corporation
LFE2M100E-5FN1152I
Lattice Semiconductor Corporation
EP4CGX30CF23I7
Intel
EP3CLS100F484I7N
Intel
5SGXMA4K3F40I3N
Intel
EP3C5E144I7
Intel
XC6VHX380T-3FFG1155C
Xilinx Inc.
AGL060V5-CSG121I
Microsemi Corporation
LFXP6E-4QN208I
Lattice Semiconductor Corporation