Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / MUN5230DW1T1
Manufacturer Part Number | MUN5230DW1T1 |
---|---|
Future Part Number | FT-MUN5230DW1T1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5230DW1T1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5230DW1T1 Weight | Contact Us |
Replacement Part Number | MUN5230DW1T1-FT |
MUN5131DW1T1G
ON Semiconductor
SMUN5115DW1T1G
ON Semiconductor
MUN5130DW1T1G
ON Semiconductor
NSVMUN5336DW1T1G
ON Semiconductor
SMUN5315DW1T1G
ON Semiconductor
NSVMUN5316DW1T1G
ON Semiconductor
MUN5311DW1T1G
ON Semiconductor
SMUN5235DW1T3G
ON Semiconductor
MUN5113DW1T1G
ON Semiconductor
MUN5134DW1T1G
ON Semiconductor
EX128-PTQ64I
Microsemi Corporation
XC6SLX150T-2FGG676I
Xilinx Inc.
M2GL090-1FCSG325I
Microsemi Corporation
A54SX32A-1TQG176
Microsemi Corporation
EP4CE6F17I7
Intel
XC6VLX240T-1FFG784C
Xilinx Inc.
XC7K325T-1FF900C
Xilinx Inc.
M2GL060-FGG676
Microsemi Corporation
AGL125V5-QNG132
Microsemi Corporation
5CEBA5U19C7N
Intel