Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / MUN5213DW1T1G
Manufacturer Part Number | MUN5213DW1T1G |
---|---|
Future Part Number | FT-MUN5213DW1T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5213DW1T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5213DW1T1G Weight | Contact Us |
Replacement Part Number | MUN5213DW1T1G-FT |
NSBA113EDXV6T1
ON Semiconductor
NSBA114EDXV6T5
ON Semiconductor
NSBA114EDXV6T5G
ON Semiconductor
NSBA114TDXV6T1
ON Semiconductor
NSBA114TDXV6T5
ON Semiconductor
NSBA114YDXV6T1
ON Semiconductor
NSBA123EDXV6T1
ON Semiconductor
NSBA123JDXV6T1
ON Semiconductor
NSBA123JDXV6T1G
ON Semiconductor
NSBA124EDXV6T1
ON Semiconductor
XC7A50T-1FT256I
Xilinx Inc.
XC6SLX100T-N3FGG484I
Xilinx Inc.
XC6SLX150T-N3FG484C
Xilinx Inc.
M2GL005-VFG400
Microsemi Corporation
A42MX16-3VQG100
Microsemi Corporation
5SGXMB5R3F43C4N
Intel
LCMXO2-4000ZE-3FG484C
Lattice Semiconductor Corporation
5AGXMB7G4F35C5N
Intel
EP20K100EFI324-2X
Intel
EPF10K50VRC240-4N
Intel