Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / MUN5212T1G
Manufacturer Part Number | MUN5212T1G |
---|---|
Future Part Number | FT-MUN5212T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5212T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 202mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SC-70-3 (SOT323) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5212T1G Weight | Contact Us |
Replacement Part Number | MUN5212T1G-FT |
MUN2136T1
ON Semiconductor
MUN2137T1
ON Semiconductor
MUN2211JT1
ON Semiconductor
MUN2211JT1G
ON Semiconductor
MUN2211T3
ON Semiconductor
MUN2212T1
ON Semiconductor
MUN2213JT1
ON Semiconductor
MUN2213JT1G
ON Semiconductor
MUN2214T1
ON Semiconductor
MUN2231T1
ON Semiconductor
XC3SD1800A-4FGG676C
Xilinx Inc.
XC2VP7-5FG456I
Xilinx Inc.
M2GL090S-1FGG484I
Microsemi Corporation
LFE5UM5G-85F-8BG554I
Lattice Semiconductor Corporation
EP1S20F672C6
Intel
5SGSED6N2F45C2LN
Intel
XC7VX415T-3FFG1158E
Xilinx Inc.
LFE3-70EA-8FN672I
Lattice Semiconductor Corporation
EP4CGX150DF31C7N
Intel
EPF10K50SQC240-1
Intel