Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / MUN5137DW1T1G
Manufacturer Part Number | MUN5137DW1T1G |
---|---|
Future Part Number | FT-MUN5137DW1T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5137DW1T1G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5137DW1T1G Weight | Contact Us |
Replacement Part Number | MUN5137DW1T1G-FT |
SMUN5230DW1T1G
ON Semiconductor
SMUN5131DW1T1G
ON Semiconductor
NSVTB60BDW1T1G
ON Semiconductor
MUN5335DW1T1G
ON Semiconductor
MUN5131DW1T1G
ON Semiconductor
SMUN5115DW1T1G
ON Semiconductor
MUN5130DW1T1G
ON Semiconductor
NSVMUN5336DW1T1G
ON Semiconductor
SMUN5315DW1T1G
ON Semiconductor
NSVMUN5316DW1T1G
ON Semiconductor
XC4010E-1BG225C
Xilinx Inc.
A3P030-1VQG100I
Microsemi Corporation
M1AGL250V2-VQ100I
Microsemi Corporation
10CL120ZF484I8G
Intel
10M16DAF484C7G
Intel
5SGSED8K2F40I2N
Intel
5SGXEA3K3F40I4N
Intel
XC7VX690T-3FFG1158E
Xilinx Inc.
XC6SLX4-2CSG225C
Xilinx Inc.
LCMXO640C-3M132C
Lattice Semiconductor Corporation