Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / MUN2111T3G
Manufacturer Part Number | MUN2111T3G |
---|---|
Future Part Number | FT-MUN2111T3G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN2111T3G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 230mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN2111T3G Weight | Contact Us |
Replacement Part Number | MUN2111T3G-FT |
SMUN2240T1G
ON Semiconductor
NSVMMUN2217LT1G
ON Semiconductor
MUN2214T3G
ON Semiconductor
SMMUN2116LT1G
ON Semiconductor
SMMUN2215LT1G
ON Semiconductor
MMUN2131LT1G
ON Semiconductor
MUN2130T1G
ON Semiconductor
MUN2136T1G
ON Semiconductor
MUN2230T1G
ON Semiconductor
MMUN2130LT1G
ON Semiconductor
A40MX02-VQG80A
Microsemi Corporation
LCMXO2-640ZE-3TG100I
Lattice Semiconductor Corporation
A3P1000-FGG484I
Microsemi Corporation
LFE5UM-85F-6BG381C
Lattice Semiconductor Corporation
10M40DCF256C7G
Intel
10AX027E3F29I2SG
Intel
5SGXEB6R3F43I3L
Intel
10AX115U1F45E1SG
Intel
EPF8282ALC84-3
Intel
EP20K200EBC356-2N
Intel