Home / Products / Integrated Circuits (ICs) / Memory / MT61M256M32JE-10 N:A TR
Manufacturer Part Number | MT61M256M32JE-10 N:A TR |
---|---|
Future Part Number | FT-MT61M256M32JE-10 N:A TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT61M256M32JE-10 N:A TR Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Volatile |
Memory Format | RAM |
Technology | SGRAM - GDDR6 |
Memory Size | 8Gb (256M x 32) |
Clock Frequency | 1.25GHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 1.21V ~ 1.29V |
Operating Temperature | 0°C ~ 95°C (TC) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT61M256M32JE-10 N:A TR Weight | Contact Us |
Replacement Part Number | MT61M256M32JE-10 N:A TR-FT |
MT53D512M64D4NZ-053 WT ES:D TR
Micron Technology Inc.
MT53D512M64D4RQ-046 WT ES:E
Micron Technology Inc.
MT53D512M64D4RQ-046 WT ES:E TR
Micron Technology Inc.
MT53D512M64D4RQ-053 WT ES:E
Micron Technology Inc.
MT53D512M64D4RQ-053 WT ES:E TR
Micron Technology Inc.
MT53D512M64D4SB-046 XT ES:E
Micron Technology Inc.
MT53D512M64D4SB-046 XT ES:E TR
Micron Technology Inc.
MT53D512M64D4SB-046 XT:D
Micron Technology Inc.
MT53D512M64D4SB-046 XT:D TR
Micron Technology Inc.
MT53D512M64D8HR-053 WT ES:B
Micron Technology Inc.
XC4013XL-2HT144C
Xilinx Inc.
LFXP6E-4TN144C
Lattice Semiconductor Corporation
A1020B-PQG100C
Microsemi Corporation
XC3S250E-5VQG100C
Xilinx Inc.
A3P600-2FGG256I
Microsemi Corporation
A3P1000-PQG208I
Microsemi Corporation
A42MX16-1PQG208M
Microsemi Corporation
LFE3-35EA-6FTN256I
Lattice Semiconductor Corporation
LFEC6E-3F484C
Lattice Semiconductor Corporation
LCMXO2-2000HE-5MG132I
Lattice Semiconductor Corporation