Home / Products / Integrated Circuits (ICs) / Memory / MT61M256M32JE-10 AAT:A TR
Manufacturer Part Number | MT61M256M32JE-10 AAT:A TR |
---|---|
Future Part Number | FT-MT61M256M32JE-10 AAT:A TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT61M256M32JE-10 AAT:A TR Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Volatile |
Memory Format | RAM |
Technology | SGRAM - GDDR6 |
Memory Size | 8Gb (256M x 32) |
Clock Frequency | 1.25GHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 1.21V ~ 1.29V |
Operating Temperature | -40°C ~ 105°C |
Mounting Type | Surface Mount |
Package / Case | 180-TFBGA |
Supplier Device Package | 180-FBGA (12x14) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT61M256M32JE-10 AAT:A TR Weight | Contact Us |
Replacement Part Number | MT61M256M32JE-10 AAT:A TR-FT |
MT53D512M64D4NZ-046 WT ES:E TR
Micron Technology Inc.
MT53D512M64D4NZ-053 WT ES:D
Micron Technology Inc.
MT53D512M64D4NZ-053 WT ES:D TR
Micron Technology Inc.
MT53D512M64D4RQ-046 WT ES:E
Micron Technology Inc.
MT53D512M64D4RQ-046 WT ES:E TR
Micron Technology Inc.
MT53D512M64D4RQ-053 WT ES:E
Micron Technology Inc.
MT53D512M64D4RQ-053 WT ES:E TR
Micron Technology Inc.
MT53D512M64D4SB-046 XT ES:E
Micron Technology Inc.
MT53D512M64D4SB-046 XT ES:E TR
Micron Technology Inc.
MT53D512M64D4SB-046 XT:D
Micron Technology Inc.
A1010B-VQG80C
Microsemi Corporation
XC3S1600E-4FG400I
Xilinx Inc.
XC3S5000-5FGG900C
Xilinx Inc.
M1A3P600L-FGG484
Microsemi Corporation
APA300-BG456
Microsemi Corporation
A40MX02-PL68
Microsemi Corporation
EP3SL150F1152I4
Intel
XC4010E-3PC84I
Xilinx Inc.
XC2VP50-7FFG1152C
Xilinx Inc.
EP1C20F324C6
Intel