Home / Products / Integrated Circuits (ICs) / Memory / MT53D512M64D8TZ-053 WT ES:B
Manufacturer Part Number | MT53D512M64D8TZ-053 WT ES:B |
---|---|
Future Part Number | FT-MT53D512M64D8TZ-053 WT ES:B |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT53D512M64D8TZ-053 WT ES:B Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - Mobile LPDDR4 |
Memory Size | 32Gb (512M x 64) |
Clock Frequency | 1866MHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | - |
Voltage - Supply | 1.1V |
Operating Temperature | -30°C ~ 85°C (TC) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT53D512M64D8TZ-053 WT ES:B Weight | Contact Us |
Replacement Part Number | MT53D512M64D8TZ-053 WT ES:B-FT |
MT53D4DBNY-DC
Micron Technology Inc.
MT53D4DBNZ-DC
Micron Technology Inc.
MT53D4DBNZ-DC TR
Micron Technology Inc.
MT53D4DBSB-DC
Micron Technology Inc.
MT53D4DBSB-DC TR
Micron Technology Inc.
MT53D4DCFL-DC
Micron Technology Inc.
MT53D4DCFL-DC TR
Micron Technology Inc.
MT53D4DCNZ-DC
Micron Technology Inc.
MT53D4DCNZ-DC TR
Micron Technology Inc.
MT53D4DCSB-DC
Micron Technology Inc.
XCKU035-1FBVA676I
Xilinx Inc.
XC3S100E-4VQ100C
Xilinx Inc.
M2GL090TS-1FCSG325I
Microsemi Corporation
A3PE3000-2FGG484I
Microsemi Corporation
A3PN030-Z1QNG48I
Microsemi Corporation
M1A3P250-2PQG208
Microsemi Corporation
EP4CE10F17A7N
Intel
EPF10K30EFC256-3
Intel
LFE2-20E-5F484C
Lattice Semiconductor Corporation
EP20K100EFC324-1
Intel