Home / Products / Integrated Circuits (ICs) / Memory / MT53D1024M32D4NQ-053 WT ES:D
Manufacturer Part Number | MT53D1024M32D4NQ-053 WT ES:D |
---|---|
Future Part Number | FT-MT53D1024M32D4NQ-053 WT ES:D |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT53D1024M32D4NQ-053 WT ES:D Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - Mobile LPDDR4 |
Memory Size | 32Gb (1G x 32) |
Clock Frequency | 1866MHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | - |
Voltage - Supply | 1.1V |
Operating Temperature | -30°C ~ 85°C (TC) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT53D1024M32D4NQ-053 WT ES:D Weight | Contact Us |
Replacement Part Number | MT53D1024M32D4NQ-053 WT ES:D-FT |
MT53B512M16D1Z11MWC2 MS
Micron Technology Inc.
MT53B512M16D1Z11NWC1
Micron Technology Inc.
MT53B512M32D2DS-053 AAT:E
Micron Technology Inc.
MT53B512M32D2DS-062 XT:C
Micron Technology Inc.
MT53B512M32D2DS-062 XT:C TR
Micron Technology Inc.
MT53B512M32D2GZ-062 AIT:B
Micron Technology Inc.
MT53B512M32D2GZ-062 AIT:B TR
Micron Technology Inc.
MT53B512M32D2GZ-062 WT ES:B
Micron Technology Inc.
MT53B512M32D2GZ-062 WT ES:B TR
Micron Technology Inc.
MT53B512M32D2GZ-062 WT:B
Micron Technology Inc.
A3P400-1FGG256
Microsemi Corporation
M2GL050S-1VFG400I
Microsemi Corporation
EPF10K10ATC100-3
Intel
EP4CE15F23C7
Intel
A1010B-1PL44I
Microsemi Corporation
XC2VP7-6FFG672I
Xilinx Inc.
APA600-FGG676I
Microsemi Corporation
LCMXO2-4000HE-5FTG256C
Lattice Semiconductor Corporation
5CGTFD7D5F31I7N
Intel
10AX115R1F40E1SG
Intel