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Manufacturer Part Number | MT47R512M4EB-25E:C |
---|---|
Future Part Number | FT-MT47R512M4EB-25E:C |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT47R512M4EB-25E:C Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR2 |
Memory Size | 2Gb (512M x 4) |
Clock Frequency | 400MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 400ps |
Memory Interface | Parallel |
Voltage - Supply | 1.55V ~ 1.9V |
Operating Temperature | 0°C ~ 85°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 60-TFBGA |
Supplier Device Package | 60-FBGA (9x11.5) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT47R512M4EB-25E:C Weight | Contact Us |
Replacement Part Number | MT47R512M4EB-25E:C-FT |
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