Home / Products / Integrated Circuits (ICs) / Memory / MT47H64M8B6-25:D TR
Manufacturer Part Number | MT47H64M8B6-25:D TR |
---|---|
Future Part Number | FT-MT47H64M8B6-25:D TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT47H64M8B6-25:D TR Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR2 |
Memory Size | 512Mb (64M x 8) |
Clock Frequency | 400MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 400ps |
Memory Interface | Parallel |
Voltage - Supply | 1.7V ~ 1.9V |
Operating Temperature | 0°C ~ 85°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 60-FBGA |
Supplier Device Package | 60-FBGA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT47H64M8B6-25:D TR Weight | Contact Us |
Replacement Part Number | MT47H64M8B6-25:D TR-FT |
MT46V32M16BN-6:C
Micron Technology Inc.
MT46V32M16BN-6:C TR
Micron Technology Inc.
MT46V32M16BN-75 IT:C
Micron Technology Inc.
MT46V32M16BN-75 IT:C TR
Micron Technology Inc.
MT46V32M16BN-75 L:C
Micron Technology Inc.
MT46V32M16BN-75 L:C TR
Micron Technology Inc.
MT46V32M16BN-75:C
Micron Technology Inc.
MT46V32M16BN-75:C TR
Micron Technology Inc.
MT46V32M16FN-5B:C
Micron Technology Inc.
MT46V32M16FN-5B:C TR
Micron Technology Inc.
A54SX32A-TQG144
Microsemi Corporation
LCMXO1200C-4T100I
Lattice Semiconductor Corporation
LCMXO2280C-4T100C
Lattice Semiconductor Corporation
5SGSED8K3F40I4N
Intel
10CX150YF672E6G
Intel
5SGXEA9N3F45I4N
Intel
LFEC33E-5F672C
Lattice Semiconductor Corporation
LCMXO2-7000HE-5BG332C
Lattice Semiconductor Corporation
10AX115H3F34E2SG
Intel
EP3SE50F780C4
Intel