Home / Products / Integrated Circuits (ICs) / Memory / MT41K256M4DA-107:J
Manufacturer Part Number | MT41K256M4DA-107:J |
---|---|
Future Part Number | FT-MT41K256M4DA-107:J |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT41K256M4DA-107:J Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR3 |
Memory Size | 1Gb (256M x 4) |
Clock Frequency | 933MHz |
Write Cycle Time - Word, Page | - |
Access Time | 20ns |
Memory Interface | Parallel |
Voltage - Supply | 1.283V ~ 1.45V |
Operating Temperature | 0°C ~ 95°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 78-TFBGA |
Supplier Device Package | 78-FBGA (8x10.5) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT41K256M4DA-107:J Weight | Contact Us |
Replacement Part Number | MT41K256M4DA-107:J-FT |
MT29F64G08AECABH1-10Z:A
Micron Technology Inc.
MT29F64G08AECABH1-10Z:A TR
Micron Technology Inc.
MT29F64G08AECDBJ4-6IT:D
Micron Technology Inc.
MT29F64G08AECDBJ4-6IT:D TR
Micron Technology Inc.
MT29F64G08AECDBJ4-6ITR:D
Micron Technology Inc.
MT29F64G08AECDBJ4-6ITR:D TR
Micron Technology Inc.
MT29F64G08CBABAL84A3WC1
Micron Technology Inc.
MT29F64G08CBABAL84A3WC1-M
Micron Technology Inc.
MT29F64G08CBABBWP-12IT:B
Micron Technology Inc.
MT29F64G08CBABBWP-12IT:B TR
Micron Technology Inc.
A40MX02-VQ80M
Microsemi Corporation
LAXP2-5E-5TN144E
Lattice Semiconductor Corporation
XC2V40-5FG256I
Xilinx Inc.
XC4010E-4PQ208C
Xilinx Inc.
XC7A25T-2CSG325C
Xilinx Inc.
M1A3P1000-2FGG256
Microsemi Corporation
AGL060V2-VQ100
Microsemi Corporation
EP4CE15U14A7N
Intel
EPF10K30EFC256-2N
Intel
EPF8636AQC208-3
Intel