Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MT3S113P(TE12L,F)
Manufacturer Part Number | MT3S113P(TE12L,F) |
---|---|
Future Part Number | FT-MT3S113P(TE12L,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT3S113P(TE12L,F) Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.3V |
Frequency - Transition | 7.7GHz |
Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
Gain | 10.5dB |
Power - Max | 1.6W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | PW-MINI |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT3S113P(TE12L,F) Weight | Contact Us |
Replacement Part Number | MT3S113P(TE12L,F)-FT |
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