Home / Products / Integrated Circuits (ICs) / Memory / MT29RZ4C8DZZMHAN-18W.80Y
Manufacturer Part Number | MT29RZ4C8DZZMHAN-18W.80Y |
---|---|
Future Part Number | FT-MT29RZ4C8DZZMHAN-18W.80Y |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29RZ4C8DZZMHAN-18W.80Y Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Non-Volatile |
Memory Format | FLASH, RAM |
Technology | FLASH - NAND, DRAM - LPDDR2 |
Memory Size | 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2) |
Clock Frequency | 533MHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 1.8V |
Operating Temperature | -25°C ~ 85°C (TA) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29RZ4C8DZZMHAN-18W.80Y Weight | Contact Us |
Replacement Part Number | MT29RZ4C8DZZMHAN-18W.80Y-FT |
MT29F64G08CECCBH1-12:C TR
Micron Technology Inc.
MT29F64G08CECDBJ4-10:D
Micron Technology Inc.
MT29F64G08CECDBJ4-10:D TR
Micron Technology Inc.
MT29F64G08CFACBWP-12:C TR
Micron Technology Inc.
MT29F64G08EBAAAB74A3WC1P
Micron Technology Inc.
MT29F64G08EBAAAB74A3WC1P TR
Micron Technology Inc.
MT29F6T08ETCBBM5-37:B
Micron Technology Inc.
MT29F6T08ETCBBM5-37:B TR
Micron Technology Inc.
MT29F6T08ETCBBM5-37ES:B TR
Micron Technology Inc.
MT29F6T08ETHBBM5-3RES:B TR
Micron Technology Inc.