Home / Products / Integrated Circuits (ICs) / Memory / MT29F512G08CFCBBWP-10M:B TR
Manufacturer Part Number | MT29F512G08CFCBBWP-10M:B TR |
---|---|
Future Part Number | FT-MT29F512G08CFCBBWP-10M:B TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29F512G08CFCBBWP-10M:B TR Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 512Gb (64G x 8) |
Clock Frequency | 100MHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29F512G08CFCBBWP-10M:B TR Weight | Contact Us |
Replacement Part Number | MT29F512G08CFCBBWP-10M:B TR-FT |
MT29F4G01ABAFD12-ITES:F
Micron Technology Inc.
MT29F4G01ABAFD12-ITES:F TR
Micron Technology Inc.
MT29F4G01ABAFDWB-IT:F
Micron Technology Inc.
MT29F4G01ABAFDWB-ITES:F
Micron Technology Inc.
MT29F4G01ABAFDWB-ITES:F TR
Micron Technology Inc.
MT29F4G01ABBFD12-AATES:F
Micron Technology Inc.
MT29F4G01ABBFD12-AATES:F TR
Micron Technology Inc.
MT29F4G01ABBFD12-ITES:F
Micron Technology Inc.
MT29F4G01ABBFD12-ITES:F TR
Micron Technology Inc.
MT29F4G01ABBFDWB-ITES:F
Micron Technology Inc.
A54SX32A-TQG144
Microsemi Corporation
LCMXO1200C-4T100I
Lattice Semiconductor Corporation
LCMXO2280C-4T100C
Lattice Semiconductor Corporation
5SGSED8K3F40I4N
Intel
10CX150YF672E6G
Intel
5SGXEA9N3F45I4N
Intel
LFEC33E-5F672C
Lattice Semiconductor Corporation
LCMXO2-7000HE-5BG332C
Lattice Semiconductor Corporation
10AX115H3F34E2SG
Intel
EP3SE50F780C4
Intel