Home / Products / Integrated Circuits (ICs) / Memory / MT29F4G16ABBDAM60A3WC1
Manufacturer Part Number | MT29F4G16ABBDAM60A3WC1 |
---|---|
Future Part Number | FT-MT29F4G16ABBDAM60A3WC1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29F4G16ABBDAM60A3WC1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 4Gb (256M x 16) |
Clock Frequency | - |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 1.7V ~ 1.95V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29F4G16ABBDAM60A3WC1 Weight | Contact Us |
Replacement Part Number | MT29F4G16ABBDAM60A3WC1-FT |
MT29F32G08AFACAWP-IT:C TR
Micron Technology Inc.
MT29F32G08AFACAWP-ITZ:C
Micron Technology Inc.
MT29F32G08AFACAWP-ITZ:C TR
Micron Technology Inc.
MT29F32G08AFACAWP-Z:C
Micron Technology Inc.
MT29F32G08AFACAWP-Z:C TR
Micron Technology Inc.
MT29F32G08CBACAL73A3WC1
Micron Technology Inc.
MT29F32G08CBACAL73A3WC1PV
Micron Technology Inc.
MT29F32G08CBACAWP-IT:C TR
Micron Technology Inc.
MT29F32G08CBCDBJ4-10:D
Micron Technology Inc.
MT29F32G08CBCDBJ4-10:D TR
Micron Technology Inc.
LCMXO2280E-4T144C
Lattice Semiconductor Corporation
XA3S200-4PQG208Q
Xilinx Inc.
AX125-FG256I
Microsemi Corporation
5CGXFC7D6F27I7N
Intel
5SGSMD6K1F40I2N
Intel
5SGXEA4K3F35I3N
Intel
XC4010E-2HQ208C
Xilinx Inc.
A40MX04-2PL84I
Microsemi Corporation
ICE40HX8K-CT256
Lattice Semiconductor Corporation
EP4SGX360FF35C2XN
Intel