Home / Products / Integrated Circuits (ICs) / Memory / MT29F4G08ABAEAH4-S:E TR
Manufacturer Part Number | MT29F4G08ABAEAH4-S:E TR |
---|---|
Future Part Number | FT-MT29F4G08ABAEAH4-S:E TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29F4G08ABAEAH4-S:E TR Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 4Gb (512M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 63-VFBGA |
Supplier Device Package | 63-VFBGA (9x11) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29F4G08ABAEAH4-S:E TR Weight | Contact Us |
Replacement Part Number | MT29F4G08ABAEAH4-S:E TR-FT |
MT29F2T08CQHBBG2-3R:B
Micron Technology Inc.
MT29F2T08CQHBBG2-3R:B TR
Micron Technology Inc.
MT29F2T08CQHBBG2-3RES:B TR
Micron Technology Inc.
MT29F2T08CTCBBJ7-6C:B
Micron Technology Inc.
MT29F2T08CTCBBJ7-6R:B TR
Micron Technology Inc.
MT29F2T08CTCCBJ7-6C:C
Micron Technology Inc.
MT29F2T08CTCCBJ7-6C:C TR
Micron Technology Inc.
MT29F2T08CTCCBJ7-6R:C
Micron Technology Inc.
MT29F2T08CTCCBJ7-6R:C TR
Micron Technology Inc.
MT29F2T08CUCBBK9-37:B
Micron Technology Inc.
XCKU035-1FBVA676I
Xilinx Inc.
XC3S100E-4VQ100C
Xilinx Inc.
M2GL090TS-1FCSG325I
Microsemi Corporation
A3PE3000-2FGG484I
Microsemi Corporation
A3PN030-Z1QNG48I
Microsemi Corporation
M1A3P250-2PQG208
Microsemi Corporation
EP4CE10F17A7N
Intel
EPF10K30EFC256-3
Intel
LFE2-20E-5F484C
Lattice Semiconductor Corporation
EP20K100EFC324-1
Intel