Home / Products / Integrated Circuits (ICs) / Memory / MT29F3T08EUCBBM4-37ES:B TR
Manufacturer Part Number | MT29F3T08EUCBBM4-37ES:B TR |
---|---|
Future Part Number | FT-MT29F3T08EUCBBM4-37ES:B TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29F3T08EUCBBM4-37ES:B TR Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 3Tb (384G x 8) |
Clock Frequency | 267MHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29F3T08EUCBBM4-37ES:B TR Weight | Contact Us |
Replacement Part Number | MT29F3T08EUCBBM4-37ES:B TR-FT |
MT29F2G08ABAEAH4-E:E TR
Micron Technology Inc.
MT29F2G08ABAEAH4-ITE:E
Micron Technology Inc.
MT29F2G08ABAEAH4-ITE:E TR
Micron Technology Inc.
MT29F2G08ABAEAM69A3WC1
Micron Technology Inc.
MT29F2G08ABAEAWP-AT:E
Micron Technology Inc.
MT29F2G08ABAEAWP-AT:E TR
Micron Technology Inc.
MT29F2G08ABAEAWP-ATX:E
Micron Technology Inc.
MT29F2G08ABAEAWP-ATX:E TR
Micron Technology Inc.
MT29F2G08ABAEAWP-E:E
Micron Technology Inc.
MT29F2G08ABAEAWP-E:E TR
Micron Technology Inc.
A54SX32A-1TQG144I
Microsemi Corporation
XC6SLX100T-2FG484I
Xilinx Inc.
A3P400-FG256
Microsemi Corporation
A42MX16-1VQ100I
Microsemi Corporation
EP3C80F484I7N
Intel
10CL120YF484C8G
Intel
A42MX16-TQ176A
Microsemi Corporation
5AGTFD7H3F35I5N
Intel
EP4SGX230DF29I4
Intel
EP1K100QC208-2N
Intel