Home / Products / Integrated Circuits (ICs) / Memory / MT29F2G08ABBEAH4:E TR
Manufacturer Part Number | MT29F2G08ABBEAH4:E TR |
---|---|
Future Part Number | FT-MT29F2G08ABBEAH4:E TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29F2G08ABBEAH4:E TR Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 2Gb (256M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 1.7V ~ 1.95V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 63-VFBGA |
Supplier Device Package | 63-VFBGA (9x11) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29F2G08ABBEAH4:E TR Weight | Contact Us |
Replacement Part Number | MT29F2G08ABBEAH4:E TR-FT |
MT29F256G08CECBBH6-6ITR:B
Micron Technology Inc.
MT29F256G08CECBBH6-6R:B
Micron Technology Inc.
MT29F256G08CECBBH6-6R:B TR
Micron Technology Inc.
MT29F256G08CECCBH6-6C:C
Micron Technology Inc.
MT29F256G08CECCBH6-6ITR:C
Micron Technology Inc.
MT29F256G08CECCBH6-6ITR:C TR
Micron Technology Inc.
MT29F256G08CECCBH6-6R:C
Micron Technology Inc.
MT29F256G08CECCBH6-6R:C TR
Micron Technology Inc.
MT29F256G08CECEBJ4-37ITRES:E
Micron Technology Inc.
MT29F256G08CECEBJ4-37ITRES:E TR
Micron Technology Inc.
LCMXO2-640ZE-1TG100I
Lattice Semiconductor Corporation
EP3SE50F484C2
Intel
EP4CE115F23I8L
Intel
XC7VX415T-1FFG1157I
Xilinx Inc.
LFXP3E-4Q208I
Lattice Semiconductor Corporation
LCMXO2-4000HC-6FG484I
Lattice Semiconductor Corporation
LCMXO3L-640E-6MG121I
Lattice Semiconductor Corporation
EP3SE110F780C2N
Intel
EP20K100BC356-2N
Intel
EP4SGX360FF35C4
Intel