Home / Products / Integrated Circuits (ICs) / Memory / MT29F128G08CECGBJ4-37R:G
Manufacturer Part Number | MT29F128G08CECGBJ4-37R:G |
---|---|
Future Part Number | FT-MT29F128G08CECGBJ4-37R:G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29F128G08CECGBJ4-37R:G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 128Gb (16G x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29F128G08CECGBJ4-37R:G Weight | Contact Us |
Replacement Part Number | MT29F128G08CECGBJ4-37R:G-FT |
MT29E512G08CEHBBJ4-3ES:B TR
Micron Technology Inc.
MT29E512G08CKCBBH7-6:B TR
Micron Technology Inc.
MT29E512G08CKCCBH7-6:C
Micron Technology Inc.
MT29E512G08CMCBBH7-6:B TR
Micron Technology Inc.
MT29E512G08CMCCBH7-6ES:C TR
Micron Technology Inc.
MT29E512G08CUCABJ3-10Z:A
Micron Technology Inc.
MT29E512G08CUCABJ3-10Z:A TR
Micron Technology Inc.
MT29E512G08CUCDBJ6-6:D
Micron Technology Inc.
MT29E512G08CUCDBJ6-6:D TR
Micron Technology Inc.
MT29E64G08CBCDBJ4-6:D
Micron Technology Inc.
LCMXO2-640ZE-1TG100I
Lattice Semiconductor Corporation
EP3SE50F484C2
Intel
EP4CE115F23I8L
Intel
XC7VX415T-1FFG1157I
Xilinx Inc.
LFXP3E-4Q208I
Lattice Semiconductor Corporation
LCMXO2-4000HC-6FG484I
Lattice Semiconductor Corporation
LCMXO3L-640E-6MG121I
Lattice Semiconductor Corporation
EP3SE110F780C2N
Intel
EP20K100BC356-2N
Intel
EP4SGX360FF35C4
Intel