Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MSD2714AT1G
Manufacturer Part Number | MSD2714AT1G |
---|---|
Future Part Number | FT-MSD2714AT1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MSD2714AT1G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 25V |
Frequency - Transition | 650MHz |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 1mA, 6V |
Current - Collector (Ic) (Max) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MSD2714AT1G Weight | Contact Us |
Replacement Part Number | MSD2714AT1G-FT |
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