Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / MS110/TR12
Manufacturer Part Number | MS110/TR12 |
---|---|
Future Part Number | FT-MS110/TR12 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MS110/TR12 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 830mV @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 100µA @ 100V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | DO-204AL, DO-41, Axial |
Supplier Device Package | DO-204AL (DO-41) |
Operating Temperature - Junction | -55°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MS110/TR12 Weight | Contact Us |
Replacement Part Number | MS110/TR12-FT |
1N5712
Microsemi Corporation
1N3595-1
Microsemi Corporation
1N3600
Microsemi Corporation
1N4446
Microsemi Corporation
1N4154
Microsemi Corporation
1N4151
Microsemi Corporation
1N4449
Microsemi Corporation
1N4454-1
Microsemi Corporation
1N482B
Microsemi Corporation
1N484B
Microsemi Corporation
A3P125-2PQ208I
Microsemi Corporation
EP3SL50F484I4N
Intel
10M16DAF256I7G
Intel
EP1K30FC256-2N
Intel
EP3SE80F1152C2
Intel
XC7K160T-2FF676C
Xilinx Inc.
AGLP060V2-CS289
Microsemi Corporation
LFXP2-5E-5QN208C
Lattice Semiconductor Corporation
LCMXO640C-3BN256I
Lattice Semiconductor Corporation
5AGXMA3D4F31I3G
Intel