Manufacturer Part Number | MS1007 |
---|---|
Future Part Number | FT-MS1007 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MS1007 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 55V |
Frequency - Transition | 30MHz |
Noise Figure (dB Typ @ f) | - |
Gain | 14dB |
Power - Max | 233W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 18 @ 1.4A, 6V |
Current - Collector (Ic) (Max) | 10A |
Operating Temperature | 200°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | M174 |
Supplier Device Package | M174 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MS1007 Weight | Contact Us |
Replacement Part Number | MS1007-FT |
64077
Microsemi Corporation
66068B
Microsemi Corporation
66082B
Microsemi Corporation
66099
Microsemi Corporation
66112
Microsemi Corporation
66116
Microsemi Corporation
68106H
Microsemi Corporation
68201A
Microsemi Corporation
68231H
Microsemi Corporation
70060A
Microsemi Corporation
M2GL025TS-1VFG256
Microsemi Corporation
5SGSMD8N1F45C2N
Intel
EP4S40G5H40I2
Intel
5SGXEA4H2F35C2LN
Intel
XC5VLX155T-2FFG1136I
Xilinx Inc.
ICE40UL640-CM36AI
Lattice Semiconductor Corporation
LFE2-20SE-6FN484C
Lattice Semiconductor Corporation
LFE2-35E-6FN484C
Lattice Semiconductor Corporation
5AGXFB1H4F35I3G
Intel
5SGXEA3H2F35C2L
Intel