Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MPS3563G
Manufacturer Part Number | MPS3563G |
---|---|
Future Part Number | FT-MPS3563G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MPS3563G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 1.5GHz |
Noise Figure (dB Typ @ f) | 6.5dB @ 60MHz |
Gain | 14dB @ 200MHz |
Power - Max | 350W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V |
Current - Collector (Ic) (Max) | 50mA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MPS3563G Weight | Contact Us |
Replacement Part Number | MPS3563G-FT |
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