Home / Products / Resistors / Through Hole Resistors / MOX-3N-131007JE
Manufacturer Part Number | MOX-3N-131007JE |
---|---|
Future Part Number | FT-MOX-3N-131007JE |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Maxi-Mox |
MOX-3N-131007JE Status (Lifecycle) | In Stock |
Part Status | Active |
Resistance | 1 GOhms |
Tolerance | ±5% |
Power (Watts) | 4W |
Composition | Thick Film |
Features | High Voltage, Non-Inductive |
Temperature Coefficient | ±50ppm/°C |
Operating Temperature | -55°C ~ 210°C |
Package / Case | Axial |
Supplier Device Package | Axial |
Size / Dimension | 0.345" Dia x 3.140" L (8.76mm x 79.76mm) |
Height - Seated (Max) | - |
Number of Terminations | 2 |
Failure Rate | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MOX-3N-131007JE Weight | Contact Us |
Replacement Part Number | MOX-3N-131007JE-FT |
OA153K
Ohmite
OA153KE
Ohmite
OA152K
Ohmite
OA152KE
Ohmite
OA151K
Ohmite
OA151KE
Ohmite
OA150KE
Ohmite
OA124KE
Ohmite
OA123K
Ohmite
OA123KE
Ohmite
A1010B-PQ100C
Microsemi Corporation
XCVU080-3FFVD1517E
Xilinx Inc.
A42MX36-2BGG272
Microsemi Corporation
5SGXMB6R2F43C2N
Intel
EP3SL340F1760I4LN
Intel
EP4CGX22BF14I7N
Intel
XC7VX550T-1FFG1927C
Xilinx Inc.
LFEC6E-4F256C
Lattice Semiconductor Corporation
EP20K200QI208-3
Intel
5CGXFC9E7F35C8N
Intel