Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MMST5551-TP
Manufacturer Part Number | MMST5551-TP |
---|---|
Future Part Number | FT-MMST5551-TP |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MMST5551-TP Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 200mW |
Frequency - Transition | 300MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SOT-323 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MMST5551-TP Weight | Contact Us |
Replacement Part Number | MMST5551-TP-FT |
PBSS4160K,115
NXP USA Inc.
PBSS5160K,115
NXP USA Inc.
SMBT 3904 B5003
Infineon Technologies
SMBT 3906 B5003
Infineon Technologies
SMBT 3906 E6767
Infineon Technologies
SMBT3904E6433HTMA1
Infineon Technologies
SMBTA 42 E6433
Infineon Technologies
SMBTA 92 E6433
Infineon Technologies
SMBTA06E6327HTSA1
Infineon Technologies
SMBTA06E6433HTMA1
Infineon Technologies