Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJD50T4G
Manufacturer Part Number | MJD50T4G |
---|---|
Future Part Number | FT-MJD50T4G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MJD50T4G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
Current - Collector Cutoff (Max) | 200µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
Power - Max | 1.56W |
Frequency - Transition | 10MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MJD50T4G Weight | Contact Us |
Replacement Part Number | MJD50T4G-FT |
NSVBC817-40WT1G
ON Semiconductor
NSVBC857CWT1G
ON Semiconductor
SMMBTA56WT1G
ON Semiconductor
BC847BWT1G
ON Semiconductor
MMBT2222AWT1G
ON Semiconductor
MSB92AS1WT1G
ON Semiconductor
MSB92ASWT1G
ON Semiconductor
MSD42SWT1G
ON Semiconductor
NSVBC848BWT1G
ON Semiconductor
NSVMMBT5401WT1G
ON Semiconductor
EX64-TQG100A
Microsemi Corporation
AFS250-FG256I
Microsemi Corporation
APA450-PQ208I
Microsemi Corporation
A40MX02-PL68A
Microsemi Corporation
5SGXMA5N2F40I3LN
Intel
EP4CE22E22C9LN
Intel
5SGXMA7H3F35I3LN
Intel
LCMXO2-4000ZE-2FTG256C
Lattice Semiconductor Corporation
EP2AGX125EF29I5
Intel
EP20K400EBC652-3AA
Intel