Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJD47T4G
Manufacturer Part Number | MJD47T4G |
---|---|
Future Part Number | FT-MJD47T4G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MJD47T4G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 250V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
Current - Collector Cutoff (Max) | 200µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
Power - Max | 1.56W |
Frequency - Transition | 10MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MJD47T4G Weight | Contact Us |
Replacement Part Number | MJD47T4G-FT |
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