Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJD253-001
Manufacturer Part Number | MJD253-001 |
---|---|
Future Part Number | FT-MJD253-001 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MJD253-001 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
Power - Max | 1.4W |
Frequency - Transition | 40MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | I-PAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MJD253-001 Weight | Contact Us |
Replacement Part Number | MJD253-001-FT |
NJVMJD31CRLG
ON Semiconductor
NJD1718T4G
ON Semiconductor
BUD42D
ON Semiconductor
BUD42D-001
ON Semiconductor
BUD42D-1G
ON Semiconductor
BUD42DG
ON Semiconductor
BUD42DT4
ON Semiconductor
BUD42DT4G
ON Semiconductor
MJD112RL
ON Semiconductor
MJD117
ON Semiconductor
LCMXO2-2000HE-5TG144C
Lattice Semiconductor Corporation
XA3S1600E-4FGG484I
Xilinx Inc.
M2GL005-1VF400I
Microsemi Corporation
LCMXO640E-3FTN256C
Lattice Semiconductor Corporation
EP3SE50F484C2
Intel
EP4CE6E22C8N
Intel
LFE2-50E-5F672I
Lattice Semiconductor Corporation
LCMXO2280E-4FTN324I
Lattice Semiconductor Corporation
5AGXMB3G6F35C6N
Intel
EP4CE30F29I7N
Intel