Manufacturer Part Number | MJD200 |
---|---|
Future Part Number | FT-MJD200 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MJD200 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 25V |
Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
Power - Max | 1.4W |
Frequency - Transition | 65MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MJD200 Weight | Contact Us |
Replacement Part Number | MJD200-FT |
MJD45H11G
ON Semiconductor
NJVMJD47T4G
ON Semiconductor
MJD47G
ON Semiconductor
MJD50G
ON Semiconductor
MJD243G
ON Semiconductor
NJVMJD44H11G
ON Semiconductor
MJD2955G
ON Semiconductor
NJVMJD45H11G
ON Semiconductor
MJD340G
ON Semiconductor
NJVNJD35N04G
ON Semiconductor
LCMXO2-256ZE-1TG100C
Lattice Semiconductor Corporation
XC3S1000L-4FGG320C
Xilinx Inc.
M7A3P1000-PQG208
Microsemi Corporation
A1020B-PL68I
Microsemi Corporation
XC5VLX110T-2FFG1136C
Xilinx Inc.
M1AFS1500-2FGG676I
Microsemi Corporation
LFXP6C-3Q208I
Lattice Semiconductor Corporation
LFE2-20SE-6F256C
Lattice Semiconductor Corporation
10AX066H4F34I3LG
Intel
EP4SGX110FF35C4N
Intel