Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJD112-1G
Manufacturer Part Number | MJD112-1G |
---|---|
Future Part Number | FT-MJD112-1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MJD112-1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Power - Max | 1.75W |
Frequency - Transition | 25MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | I-PAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MJD112-1G Weight | Contact Us |
Replacement Part Number | MJD112-1G-FT |
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