Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / MG1775S-BN4MM
Manufacturer Part Number | MG1775S-BN4MM |
---|---|
Future Part Number | FT-MG1775S-BN4MM |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MG1775S-BN4MM Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 125A |
Power - Max | 520W |
Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 75A |
Current - Collector Cutoff (Max) | 3mA |
Input Capacitance (Cies) @ Vce | 6.8nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | S-3 Module |
Supplier Device Package | S3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MG1775S-BN4MM Weight | Contact Us |
Replacement Part Number | MG1775S-BN4MM-FT |
FP15R12W1T4PB11BPSA1
Infineon Technologies
DF160R12W2H3_B11
Infineon Technologies
VS-70MT060WSP
Vishay Semiconductor Diodes Division
VS-100MT060WDF
Vishay Semiconductor Diodes Division
VS-100MT060WSP
Vishay Semiconductor Diodes Division
VS-150MT060WDF
Vishay Semiconductor Diodes Division
VS-20MT120UFAPBF
Vishay Semiconductor Diodes Division
VS-20MT120UFP
Vishay Semiconductor Diodes Division
VS-25MT060WFAPBF
Vishay Semiconductor Diodes Division
VS-70MT060WHTAPBF
Vishay Semiconductor Diodes Division
A1010B-VQG80C
Microsemi Corporation
XC2S50E-6FTG256C
Xilinx Inc.
AX250-FG484M
Microsemi Corporation
LCMXO1200E-4FTN256C
Lattice Semiconductor Corporation
10AX022E3F27E2LG
Intel
10M50DAF672C8G
Intel
5SGXMB6R1F43C2LN
Intel
XC7K70T-1FB484C
Xilinx Inc.
EP2C70F896C6N
Intel
EP1C4F400C8
Intel