Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / MG17200D-BN4MM
Manufacturer Part Number | MG17200D-BN4MM |
---|---|
Future Part Number | FT-MG17200D-BN4MM |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MG17200D-BN4MM Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 300A |
Power - Max | 1250W |
Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 200A |
Current - Collector Cutoff (Max) | 3mA |
Input Capacitance (Cies) @ Vce | 18nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | D-3 Module |
Supplier Device Package | D3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MG17200D-BN4MM Weight | Contact Us |
Replacement Part Number | MG17200D-BN4MM-FT |
FZ1800R17HE4B9HOSA2
Infineon Technologies
FZ2400R12HP4B9HOSA2
Infineon Technologies
FZ2400R12HP4HOSA2
Infineon Technologies
FZ2400R17HP4B9HOSA2
Infineon Technologies
FZ3600R17HE4HOSA2
Infineon Technologies
FZ3600R17HP4HOSA2
Infineon Technologies
FP15R12W1T4PB11BPSA1
Infineon Technologies
DF160R12W2H3_B11
Infineon Technologies
VS-70MT060WSP
Vishay Semiconductor Diodes Division
VS-100MT060WDF
Vishay Semiconductor Diodes Division