Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MDS1100
Manufacturer Part Number | MDS1100 |
---|---|
Future Part Number | FT-MDS1100 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MDS1100 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Frequency - Transition | 1.03GHz |
Noise Figure (dB Typ @ f) | - |
Gain | 8.9dB |
Power - Max | 8750W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
Current - Collector (Ic) (Max) | 100A |
Operating Temperature | 200°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 55TU-1 |
Supplier Device Package | 55TU-1 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MDS1100 Weight | Contact Us |
Replacement Part Number | MDS1100-FT |
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