Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / MC1413DR2
Manufacturer Part Number | MC1413DR2 |
---|---|
Future Part Number | FT-MC1413DR2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MC1413DR2 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 7 NPN Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 16-SOIC |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MC1413DR2 Weight | Contact Us |
Replacement Part Number | MC1413DR2-FT |
ULN2003V12T16-13
Diodes Incorporated
SN75468N
Texas Instruments
ULN2004AN
Texas Instruments
ULN2002AN
Texas Instruments
ULN2004AIN
Texas Instruments
ULN2003BN
Texas Instruments
SN75469N
Texas Instruments
ULN2003AN
Texas Instruments
SN75468NG4
Texas Instruments
ULN2002ANE4
Texas Instruments
LFE2-6E-6TN144C
Lattice Semiconductor Corporation
XC7A100T-1FGG676C
Xilinx Inc.
XC3S1000-4FGG456I
Xilinx Inc.
XC6VCX130T-1FFG484C
Xilinx Inc.
M1A3P1000L-FGG484I
Microsemi Corporation
LCMXO640E-3FT256C
Lattice Semiconductor Corporation
AGLN125V2-ZVQ100
Microsemi Corporation
10M16DCF256C8G
Intel
5SGXEABN3F45I4N
Intel
LCMXO2-4000HE-6FG484I
Lattice Semiconductor Corporation