Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / MBRB16H35HE3_A/P
Manufacturer Part Number | MBRB16H35HE3_A/P |
---|---|
Future Part Number | FT-MBRB16H35HE3_A/P |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
MBRB16H35HE3_A/P Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 35V |
Current - Average Rectified (Io) | 16A |
Voltage - Forward (Vf) (Max) @ If | 660mV @ 16A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 100µA @ 35V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MBRB16H35HE3_A/P Weight | Contact Us |
Replacement Part Number | MBRB16H35HE3_A/P-FT |
BAT82S-TAP
Vishay Semiconductor Diodes Division
BAT82S-TR
Vishay Semiconductor Diodes Division
BAT83S-TAP
Vishay Semiconductor Diodes Division
BAT85S-TR
Vishay Semiconductor Diodes Division
BAT86S-TAP
Vishay Semiconductor Diodes Division
BAT86S-TR
Vishay Semiconductor Diodes Division
BAV17-TAP
Vishay Semiconductor Diodes Division
BAV17-TR
Vishay Semiconductor Diodes Division
BAV18-TAP
Vishay Semiconductor Diodes Division
BAV18-TR
Vishay Semiconductor Diodes Division
XC3S50AN-4TQ144I
Xilinx Inc.
LCMXO1200E-5TN144C
Lattice Semiconductor Corporation
LCMXO640E-5T100C
Lattice Semiconductor Corporation
XC7A100T-3FTG256E
Xilinx Inc.
AGL030V2-CSG81I
Microsemi Corporation
EP3SL70F484C4LN
Intel
10M50DAF484I7P
Intel
AGL125V2-QNG132I
Microsemi Corporation
LFE5U-25F-7BG256C
Lattice Semiconductor Corporation
EP20K200EBC356-1X
Intel