Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / MBRB16H35HE3/45
Manufacturer Part Number | MBRB16H35HE3/45 |
---|---|
Future Part Number | FT-MBRB16H35HE3/45 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
MBRB16H35HE3/45 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 35V |
Current - Average Rectified (Io) | 16A |
Voltage - Forward (Vf) (Max) @ If | 660mV @ 16A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 100µA @ 35V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MBRB16H35HE3/45 Weight | Contact Us |
Replacement Part Number | MBRB16H35HE3/45-FT |
FESB8GT-E3/45
Vishay Semiconductor Diodes Division
FESB8GT-E3/81
Vishay Semiconductor Diodes Division
FESB8GTHE3/45
Vishay Semiconductor Diodes Division
FESB8GTHE3/81
Vishay Semiconductor Diodes Division
FESB8HT-E3/81
Vishay Semiconductor Diodes Division
FESB8HTHE3/45
Vishay Semiconductor Diodes Division
FESB8HTHE3/81
Vishay Semiconductor Diodes Division
FESB8JT-E3/45
Vishay Semiconductor Diodes Division
FESB8JT-E3/81
Vishay Semiconductor Diodes Division
FESB8JTHE3/45
Vishay Semiconductor Diodes Division
A1010B-2VQG80C
Microsemi Corporation
XC7K410T-2FBG676C
Xilinx Inc.
LFE2-20E-6Q208C
Lattice Semiconductor Corporation
AFS600-FG484K
Microsemi Corporation
A3P1000-PQ208
Microsemi Corporation
5SGXEB5R3F43C2L
Intel
5SEE9H40I4N
Intel
XC7VX690T-L2FFG1761E
Xilinx Inc.
5CEFA7F23C8N
Intel
EP20K200EQC208-1
Intel