Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / MBR600200CT
Manufacturer Part Number | MBR600200CT |
---|---|
Future Part Number | FT-MBR600200CT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MBR600200CT Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) (per Diode) | 300A |
Voltage - Forward (Vf) (Max) @ If | 920mV @ 300A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 3mA @ 200V |
Operating Temperature - Junction | -55°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Twin Tower |
Supplier Device Package | Twin Tower |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MBR600200CT Weight | Contact Us |
Replacement Part Number | MBR600200CT-FT |
MBR2X080A060
GeneSiC Semiconductor
MBR2X080A080
GeneSiC Semiconductor
MBR2X080A120
GeneSiC Semiconductor
MBR2X080A150
GeneSiC Semiconductor
MBR2X080A180
GeneSiC Semiconductor
MBR2X080A200
GeneSiC Semiconductor
MBR2X100A045
GeneSiC Semiconductor
MBR2X100A060
GeneSiC Semiconductor
MBR2X100A080
GeneSiC Semiconductor
MBR2X100A100
GeneSiC Semiconductor
5SGSMD6N3F45C2N
Intel
5SGXEA5H1F35C1N
Intel
A54SX08A-1TQ100
Microsemi Corporation
A42MX16-1PQ160
Microsemi Corporation
LFE2-50SE-6FN484C
Lattice Semiconductor Corporation
EP2AGX65CU17C4
Intel
5CGXBC3B6U15C7N
Intel
EPF10K30RI208-4
Intel
EP20K160EQC208-1X
Intel
EP4SGX360FF35C3N
Intel