Manufacturer Part Number | MB6S |
---|---|
Future Part Number | FT-MB6S |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MB6S Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Single Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 600V |
Current - Average Rectified (Io) | 500mA |
Voltage - Forward (Vf) (Max) @ If | 1V @ 500mA |
Current - Reverse Leakage @ Vr | 5µA @ 600V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-269AA, 4-BESOP |
Supplier Device Package | 4-SOIC |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MB6S Weight | Contact Us |
Replacement Part Number | MB6S-FT |
GBPC2508T
GeneSiC Semiconductor
GBPC2504T
GeneSiC Semiconductor
GBPC2506T
GeneSiC Semiconductor
GBPC1510T
GeneSiC Semiconductor
GBPC2510T
GeneSiC Semiconductor
GBPC3510T
GeneSiC Semiconductor
GBL005
GeneSiC Semiconductor
GBL02
GeneSiC Semiconductor
GBL06
GeneSiC Semiconductor
DB103G
GeneSiC Semiconductor
XC6SLX9-N3FT256I
Xilinx Inc.
XCV400-6FG676C
Xilinx Inc.
M7A3P1000-1FG484
Microsemi Corporation
LCMXO2280E-4FTN256I
Lattice Semiconductor Corporation
EP3C25U256I7N
Intel
5SGXMBBR2H43C2N
Intel
LFE3-70E-8FN1156I
Lattice Semiconductor Corporation
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
LFE3-70EA-9FN484I
Lattice Semiconductor Corporation
EP2AGX125EF35C4N
Intel