Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MAX2601ESA-T
Manufacturer Part Number | MAX2601ESA-T |
---|---|
Future Part Number | FT-MAX2601ESA-T |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MAX2601ESA-T Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Frequency - Transition | 1GHz |
Noise Figure (dB Typ @ f) | 3.3dB @ 836MHz |
Gain | 11.6dB |
Power - Max | 6.4W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 250mA, 3V |
Current - Collector (Ic) (Max) | 1.2A |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Supplier Device Package | 8-SOIC-EP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MAX2601ESA-T Weight | Contact Us |
Replacement Part Number | MAX2601ESA-T-FT |
BFU530WF
NXP USA Inc.
BFU530WX
NXP USA Inc.
BFU550WF
NXP USA Inc.
BFQ67W,115
NXP USA Inc.
BFQ67W,135
NXP USA Inc.
BFR92AW,115
NXP USA Inc.
BFR92AW,135
NXP USA Inc.
BFR93AW,115
NXP USA Inc.
BFR93AW,135
NXP USA Inc.
BFR94AW,115
NXP USA Inc.