Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / KSD2012YYDTU
Manufacturer Part Number | KSD2012YYDTU |
---|---|
Future Part Number | FT-KSD2012YYDTU |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
KSD2012YYDTU Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
Current - Collector Cutoff (Max) | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
Power - Max | 25W |
Frequency - Transition | 3MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack, Formed Leads |
Supplier Device Package | TO-220F-3 (Y-Forming) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
KSD2012YYDTU Weight | Contact Us |
Replacement Part Number | KSD2012YYDTU-FT |
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