Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / KSB811GBU
Manufacturer Part Number | KSB811GBU |
---|---|
Future Part Number | FT-KSB811GBU |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
KSB811GBU Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 25V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
Power - Max | 350mW |
Frequency - Transition | 110MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Short Body |
Supplier Device Package | TO-92S |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
KSB811GBU Weight | Contact Us |
Replacement Part Number | KSB811GBU-FT |
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