Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTXV2N6301
Manufacturer Part Number | JANTXV2N6301 |
---|---|
Future Part Number | FT-JANTXV2N6301 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/539 |
JANTXV2N6301 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Darlington |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
Current - Collector Cutoff (Max) | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
Power - Max | 75W |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-213AA, TO-66-2 |
Supplier Device Package | TO-66 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTXV2N6301 Weight | Contact Us |
Replacement Part Number | JANTXV2N6301-FT |
BCW66GR
Nexperia USA Inc.
BCW66GVL
Nexperia USA Inc.
BCW66HVL
Nexperia USA Inc.
BCW68FR
Nexperia USA Inc.
BCW68FVL
Nexperia USA Inc.
BCW68GVL
Nexperia USA Inc.
BCW68HVL
Nexperia USA Inc.
BCW70,235
Nexperia USA Inc.
BCW72,235
Nexperia USA Inc.
BCX17,235
Nexperia USA Inc.
M2GL050T-FCSG325
Microsemi Corporation
A42MX36-1CQ256
Microsemi Corporation
5SGXEA3K1F40C2N
Intel
EP4SE360H29C3N
Intel
10AX032E3F27E2LG
Intel
10AX022E4F29I3LG
Intel
XA7A35T-1CPG236Q
Xilinx Inc.
LCMXO2-2000ZE-2FTG256I
Lattice Semiconductor Corporation
EP3SE110F780C2N
Intel
EP3SL110F780I4L
Intel