Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTXV2N6059
Manufacturer Part Number | JANTXV2N6059 |
---|---|
Future Part Number | FT-JANTXV2N6059 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/502 |
JANTXV2N6059 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 12A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
Power - Max | 150W |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3 |
Supplier Device Package | TO-3 (TO-204AA) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTXV2N6059 Weight | Contact Us |
Replacement Part Number | JANTXV2N6059-FT |
JAN2N6675
Microsemi Corporation
JAN2N6676
Microsemi Corporation
JAN2N6678
Microsemi Corporation
JAN2N7369
Microsemi Corporation
APT27ZTR-G1
Diodes Incorporated
DSS5220T-13
Diodes Incorporated
DSS5220T-7
Diodes Incorporated
DXTN3C60PS-13
Diodes Incorporated
JANTX2N1893
Microsemi Corporation
JANTX2N1893S
Microsemi Corporation
XA7A100T-1FGG484I
Xilinx Inc.
A3PE600-1FG484I
Microsemi Corporation
EP4CE10F17C8LN
Intel
5SGXEA4H2F35C1N
Intel
EP3SE110F1152C2N
Intel
XCS10XL-5PC84C
Xilinx Inc.
XC4VLX25-11FFG676I
Xilinx Inc.
M2GL060T-FGG676
Microsemi Corporation
LFE3-70E-6FN1156C
Lattice Semiconductor Corporation
EP1S60B956C7
Intel