Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTX2N6351
Manufacturer Part Number | JANTX2N6351 |
---|---|
Future Part Number | FT-JANTX2N6351 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/472 |
JANTX2N6351 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 5A |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 5V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AC, TO-33-4 Metal Can |
Supplier Device Package | TO-33 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTX2N6351 Weight | Contact Us |
Replacement Part Number | JANTX2N6351-FT |
JANS2N5415UA
Microsemi Corporation
JANS2N5416
Microsemi Corporation
JANS2N5416U4
Microsemi Corporation
JANS2N5416UA
Microsemi Corporation
JANS2N5665
Microsemi Corporation
JANS2N5666U3
Microsemi Corporation
JANS2N5667
Microsemi Corporation
JANS2N6193
Microsemi Corporation
JANS2N6193U3
Microsemi Corporation
JANS2N6249T1
Microsemi Corporation
AT40K10LV-3BQC
Microchip Technology
XC3S400A-5FG400C
Xilinx Inc.
XA3S200A-4FTG256Q
Xilinx Inc.
5SGSED8N2F45I2
Intel
5SGSMD6N3F45C2N
Intel
LFE3-35EA-6LFN484C
Lattice Semiconductor Corporation
EP2AGX125EF35I5N
Intel
EPF8282ALC84-4N
Intel
EPF8452AQC160-4
Intel
EP4SGX180FF35I3
Intel