Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N697
Manufacturer Part Number | JAN2N697 |
---|---|
Future Part Number | FT-JAN2N697 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/99 |
JAN2N697 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | - |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
Power - Max | 600mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N697 Weight | Contact Us |
Replacement Part Number | JAN2N697-FT |
FPN430A
ON Semiconductor
FPN530
ON Semiconductor
FPN530A
ON Semiconductor
HCT2222A
TT Electronics/Optek Technology
HCT2222ATX
TT Electronics/Optek Technology
HCT2222ATXV
TT Electronics/Optek Technology
HD1A3M(0)-T1-AZ
Renesas Electronics America
JAN2N1016B
Microsemi Corporation
JAN2N1016C
Microsemi Corporation
JAN2N1016D
Microsemi Corporation
XA7A100T-1FGG484I
Xilinx Inc.
A3PE600-1FG484I
Microsemi Corporation
EP4CE10F17C8LN
Intel
5SGXEA4H2F35C1N
Intel
EP3SE110F1152C2N
Intel
XCS10XL-5PC84C
Xilinx Inc.
XC4VLX25-11FFG676I
Xilinx Inc.
M2GL060T-FGG676
Microsemi Corporation
LFE3-70E-6FN1156C
Lattice Semiconductor Corporation
EP1S60B956C7
Intel